sot23 npn silicon planar high performance transistor issue 3 ? february 1996 features * 140 volt v ceo * 1 amp continuous current *p tot = 500 mw partmarking detail ? 455 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 140 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a base current i b 200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 160 v i c =100 m a collector-emitter sustaining voltage v ceo(sus) 140 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =140v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.7 v i c =150ma, i b =15ma static forward current transfer ratio h fe 100 10 typ 300 i c =150ma, v ce =10v* i c =1a, v ce =10v* transition frequency f t 100 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 15 pf v cb =10v, f=1mhz * measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT455 sot23 c b e FMMT455 3 - 110 3 - 111 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v ol ts ) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - nor m al i sed g ai n ( %) v - (v ol ts ) v - (v olts) single pulse test at t amb =25c 0.001 0.01 10 0.1 1 20 40 60 80 100 0.2 0.001 0.1 1 0.4 0.6 1.0 0 0.001 0.01 1 0.1 0.1 0.2 0.3 0.4 v ce =10v i c /i b =10 i c /i b =10 typical switching speeds i c - collector current (amps) s w i t chi ng tim e 0.1 1 0.01 tf 100 0 td ns 50 0.01 0.0001 0.001 1 0.01 0.1 0.6 0.8 1.0 1.2 v ce =10v 0.4 0.8 tf ns 900 tr ns 300 200 100 400 500 0 600 500 400 700 800 300 ts s ts td tr 0 3 2 1 6 5 4 7 i b1 =i b2 =i c /10 v ce =10v 10 1 safe operating area v ce - collector emitter voltage (v) 110 0.1 0.1 100 0.01 1s dc 100ms 10ms 100 m s 1ms 1000 0.001
sot23 npn silicon planar high performance transistor issue 3 ? february 1996 features * 140 volt v ceo * 1 amp continuous current *p tot = 500 mw partmarking detail ? 455 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 140 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a base current i b 200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 160 v i c =100 m a collector-emitter sustaining voltage v ceo(sus) 140 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =140v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.7 v i c =150ma, i b =15ma static forward current transfer ratio h fe 100 10 typ 300 i c =150ma, v ce =10v* i c =1a, v ce =10v* transition frequency f t 100 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 15 pf v cb =10v, f=1mhz * measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT455 sot23 c b e FMMT455 3 - 110 3 - 111 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v ol ts ) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - nor m al i sed g ai n ( %) v - (v ol ts ) v - (v olts) single pulse test at t amb =25c 0.001 0.01 10 0.1 1 20 40 60 80 100 0.2 0.001 0.1 1 0.4 0.6 1.0 0 0.001 0.01 1 0.1 0.1 0.2 0.3 0.4 v ce =10v i c /i b =10 i c /i b =10 typical switching speeds i c - collector current (amps) s w i t chi ng tim e 0.1 1 0.01 tf 100 0 td ns 50 0.01 0.0001 0.001 1 0.01 0.1 0.6 0.8 1.0 1.2 v ce =10v 0.4 0.8 tf ns 900 tr ns 300 200 100 400 500 0 600 500 400 700 800 300 ts s ts td tr 0 3 2 1 6 5 4 7 i b1 =i b2 =i c /10 v ce =10v 10 1 safe operating area v ce - collector emitter voltage (v) 110 0.1 0.1 100 0.01 1s dc 100ms 10ms 100 m s 1ms 1000 0.001
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